ELECTRIC THERMAL MODELING OF TEMPERATURE-DEPENDENT VAC OF THE TRANSISTOR-TYPE CONVERTERS IN BIOMEDICAL ENGINEERING
DOI:
https://doi.org/10.31649/1999-9941-2024-59-1-62-68Keywords:
measuring transducers, electrothermal modeling, biomedical devices, biomedical systemsAbstract
Abstract. Considered problems of instability of iterative processes in the analysis of I/V measuring converters with negative differential resistance caused by self-heating of these converters. An express method of determining the limits in which correct electrothermal DC analysis is provided has been developed. According to the problems considered the method of the synthesis of the electrothermal model of the transistor structures of thermal flow sensors. Analyzing the model of the bipolar transistor from the point of view of the impact of self-heating temperature on VAC, it is necessary to consider, at least, three mechanisms of temperature impact. It should be noted ,that, as in the models presented before, we speak not only of the impact of the ambient temperature on the parameters of the transistor, but on its self-heating, i.e., direct impact of power released in the transistor structure on its electric physical parameters. A method of synthesis of electrothermal models of thermoresistive, diode and transistor structures of primary converters of thermal flow sensors is proposed. In contrast to well-known circuit modeling packages (PSpice or MicroCAP), the proposed method allows you to obtain I-V characteristics in one cycle of DC analysis, taking into account the self-heating of the above-mentioned converters. A complex method of electro-thermal modeling of measuring transducers of thermal flow sensors has been developed, which includes the synthesis of a pulse temperature relaxation substitution circuit and a method of forming I-V converters in the mode of their self-heating by the supply current. It is obvious, that from the point of view of practical usage of the transistors in the circuits of measuring converters of thermal flow sensors it is necessary to provide not only the sufficient heating of the transistor structure but also the sufficient electric thermal stability of its operation. For this purpose it is necessary to use, in particular, emitting stabilizing resistors or differential connection of the pair of the transistors with current supply.
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